1 MRF6401 motorola rf device data the rf line
the m rf640 1 i s d esigne d f o r c las s a c ommon e mitter , l inea r p ower amplifier s i n t h e 1 .0 2. 0 g h z f requenc y r ange. i t h a s b ee n s pecifically designed for use in personal communications network (pcn) base station and inmarsat standard m applications. ? specified 20 volts, 1.66 ghz characteristics: output power e 0.5 watts gain e 10 db min class a operation ? specified 20 volts, 1.88 ghz characteristics: output power e 0.5 watts gain e 9.0 db min class a operation ? circuit board photomaster available by ordering document MRF6401pht/d from motorola literature distribution. maximum ratings rating symbol value unit collectoremitter voltage v ceo 22 vdc collectorbase voltage v cbo 45 vdc emitterbase voltage v ebo 3.5 vdc operating junction temperature t j 200 c total device dissipation @ t c = 25 c derate above 25 c p d 5.8 0.033 watts w/ c storage temperature range t stg 65 to +150 c thermal characteristics characteristic symbol max unit thermal resistance, junction to case (1) r q jc 30 c/w electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics collectoremitter breakdown voltage (i c = 10 madc, r b = 75 w ) v (br)cer 28 e e vdc emitterbase breakdown voltage (i e = 0.25 madc) v (br)ebo 3.5 e e vdc collectorbase breakdown voltage (i c = 1 madc) v (br)cbo 45 e e vdc (1) thermal resistance is determined under specified rf operating condition. order this document by MRF6401/d
semiconductor technical data
0.5 w, 1.0 to 2.0 ghz rf linear power transistor case 305c02, style 1 soe200pill ? motorola, inc. 1995 rev 1
MRF6401 2 motorola rf device data electrical characteristics e continued (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit on characteristics dc current gain (i c = 0.1 adc, v ce = 5 vdc) h fe 20 e 120 e dynamic characteristics output capacitance (v cb = 26 v, i e = 0, f = 1 mhz) c ob e 1.4 e pf functional tests (v cc = 20 v, i cq = 80 ma) commonemitter amplifier power gain (f = 1660 mhz, p out = 0.5 w) (f = 1880 mhz, p out = 0.5 w) g p 10 9 11 10 e e db load mismatch (f = 1660 mhz, f = 1880 mhz, p out = 0.5 w, load vswr = 20:1, all phase angles at frequency of test) y no degradation in output power intermodulation distortion (p out = 0.5 w pep, f1 = 1659.2 mhz, f2 = 1660 mhz) (p out = 0.5 w pep, f1 = 1879.2 mhz, f2 = 1880 mhz) imd 30 30 35 35 e e dbc figure 1. 1600 2000 mhz broadband application amplifier schematic c1 1.5 pf, atc chip capacitor 100a c2 3.9 pf, atc chip capacitor 100a c3 56 pf, atc chip capacitor 100a c4, c6, c7, c9 15 nf, chip capacitor 0805 c5 47 pf, atc chip capacitor 100a c8 4.7 m f, 35 v, capacitor c10 10 m f, 16 v, capacitor c11 100 pf, atc chip capacitor 100a q1 transistor, bcv62 r2 470 w , chip resistor 0805 r3 4.7 k w , chip resistor 0805 r4 8.2 k w , chip resistor 0805 r5 5 k w , smd potentiometer r6 680 w , chip resistor 0805 r7, r8 7.5 w , chip resistor 0805 tl1 to tl11 m strip lines; see photomaster document, MRF6401pht/d tp1 m strip taper; see photomaster document, MRF6401pht/d r4 r5 r6 r2 r3 c9 r7 r8 + c4 c3 c10 tl10 tl4 tl1 tl2 tl3 tl4 tp1 c1 dut tl5 tl7 tl9 c2 tl8 tl6 c5 c6 tl11 c7 c8 v cc rf output rf input q1
3 MRF6401 motorola rf device data p , output power (dbm) out figure 2. output power versus input power 1000 800 600 400 200 100 80 60 40 20 0 p in , input power (mw) p , output power (mw) out figure 3. third order intercept 40 20 0 20 40 25 20 15 10 5 0 p in , input power (dbm) 60 figure 4. performance in broadband test fixture 10 5 5 1 0 15 1500 f, frequency (mhz) 20 gain, return loss (db) 1600 1700 1800 1900 2000 2100 v cc = 20 v i c = 80 ma f = 1880 mhz v cc = 20 v i c = 80 ma f = 1880 mhz 800 khz tone separation v cc = 20 v p in = 10 dbm i c = 80 ma s21 s11 s22 0 s11 s22 typical characteristics
MRF6401 4 motorola rf device data table 1. common emitter sparameters v cc = 20 v, i c = 80 ma polar sparameters in 50 w system f mhz s 11 s 21 s 12 s 22 f mhz |s 11 | f |s 21 | f |s 12 | f |s 22 | f 100 0.626 118 28.4 127 0.0186 45 0.649 40 200 0.718 149 17.1 106 0.0230 35 0.434 49 400 0.754 171 9.10 88 0.0271 35 0.303 53 600 0.761 179 6.15 77 0.0312 38 0.272 56 800 0.762 171 4.65 68 0.0359 42 0.266 62 1000 0.763 165 3.73 60 0.0409 44 0.271 68 1200 0.758 159 3.13 52 0.0469 44 0.286 75 1400 0.753 155 2.60 44 0.0490 46 0.291 87 1600 0.765 150 2.30 39 0.0574 50 0.288 93 1800 0.769 144 2.06 32 0.0665 49 0.303 97 1900 0.768 142 1.98 29 0.0714 48 0.312 100 2000 0.767 139 1.88 25 0.0756 48 0.322 103 v cc = 20 v, i c = 50 ma polar sparameters in 50 w system f mhz s 11 s 21 s 12 s 22 f mhz |s 11 | f |s 21 | f |s 12 | f |s 22 | f 100 0.618 113 26.2 130 0.0195 45 0.678 36 200 0.713 145 16.2 108 0.0251 34 0.465 47 400 0.758 168 8.78 89.2 0.0288 32 0.331 51 600 0.763 180 5.94 78 0.0323 35 0.297 55 800 0.761 169 4.49 68 0.0363 39 0.290 61 1000 0.764 166 3.61 60 0.0415 41 0.294 68 1200 0.758 160 3.02 52 0.0467 42 0.310 75 1400 0.757 155 2.52 44.5 0.0486 45 0.313 87 1600 0.768 150 2.22 39 0.0566 48 0.311 92 1800 0.772 145 2 32 0.0655 48 0.328 97 1900 0.770 142 1.91 28 0.0705 47 0.335 101 2000 0.772 140 1.81 25 0.0745 47 0.345 104 figure 5. test circuit components layout ??? ??? ??? ?? ?? ?? ?? ?? ?? ?? ?? gnd + v cc r4 r5 r6 r7 r8 c9 r2 r3 q1 c10 c4 c3 c1 c5 c6 c8 c7 c11 c2
5 MRF6401 motorola rf device data package dimensions case 305c02 issue a notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. style 1: pin 1. emitter 2. base 3. emitter 4. collector k f 4 2 3 1 d c h j a dim min max min max millimeters inches a 0.200 0.210 5.08 5.33 c 0.125 3.17 d 0.120 0.130 3.05 3.30 f 0.025 0.035 0.64 0.88 h 0.035 0.045 0.88 1.14 j 0.004 0.006 0.11 0.15 k 0.970 1.030 24.64 26.16
MRF6401 6 motorola rf device data how to reach us: usa / europe : motorola literature distribution; japan : nippon motorola ltd.; tatsumispdjldc, toshikatsu otsuki, p.o. box 20912; phoenix, arizona 85036. 18004412447 6f seibubutsuryucenter, 3142 tatsumi kotoku, tokyo 135, japan. 0335218315 mfax : rmf ax0@email.sps.mot.com t ouchtone (602) 2446609 hong kong : motorola semiconductors h.k. ltd.; 8b tai ping industrial park, internet : http://designnet.com 51 ting kok road, tai po, n.t., hong kong. 85226629298 motorola reserves the right to make changes without further notice to any products herein. motorola makes no warranty , representation or guarantee regarding the suitability of its products for any particular purpose, nor does motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability , including without limitation consequential or incidental damages. at ypicalo parameters can and do vary in dif ferent applications. all operating parameters, including at ypicalso must be validated for each customer application by customer ' s technical experts. motorola does not convey any license under its patent rights nor the rights of others. motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the motorola product could create a situation where personal injury or death may occur . should buyer purchase or use motorola products for any such unintended or unauthorized application, buyer shall indemnify and hold motorola and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly , any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that motorola was negligent regarding the design or manufacture of the part. motorola and are registered trademarks of motorola, inc. motorola, inc. is an equal opportunity/af firmative action employer . MRF6401/d
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